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IXSR35N120BD1

IGBT Transistors 70 Amps 1200V 3.6 Rds

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SeekIC No. : 00143051 Detail

IXSR35N120BD1: IGBT Transistors 70 Amps 1200V 3.6 Rds

IXSR35N120BD1 Data Sheet

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Part Number:
IXSR35N120BD1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 3.6 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : ISOPLUS247-3
Packaging : Bulk    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Packaging : Bulk
Package / Case : ISOPLUS247-3
Collector-Emitter Saturation Voltage : 3.6 V


Features:

·DCB Isolated mounting tab
·Meets TO-247AD package outline
·High current handling capability
·Latest generation HDMOSTM process
·MOS Gate turn-on drive simplicity


Application

·Uninterruptible power supplies (UPS)
·Switched-mode and resonant-mode power supplies
·AC motor speed control
·DC servo and robot drives
·DC choppers


Parameters:

Technical/Catalog InformationIXSR35N120BD1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 30A
Power - Max250W
Mounting TypeThrough Hole
Package / CaseISOPLUS247?
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSR35N120BD1
IXSR35N120BD1



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