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IXSQ10N60B2D1

IGBT Transistors 10 Amps 600V 2.5 Rds

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SeekIC No. : 00143960 Detail

IXSQ10N60B2D1: IGBT Transistors 10 Amps 600V 2.5 Rds

IXSQ10N60B2D1 Data Sheet

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Part Number:
IXSQ10N60B2D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 100 nA Power Dissipation : 100 W
Maximum Operating Temperature : + 150 C Package / Case : TO-3P-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.5 V
Power Dissipation : 100 W
Package / Case : TO-3P-3


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