IGBT Transistors 10 Amps 600V 2.5 Rds
IXSP10N60B2D1: IGBT Transistors 10 Amps 600V 2.5 Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | +/- 100 nA | Power Dissipation : | 100 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220-3 |
Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
600 600 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V |
IC25 IC110 IF(110) ICM |
TC = 25°C TC = 90°C TC = 25°C, 1 ms |
20 10 11 30 |
A |
SSOA (RBSOA) |
VGE = 15 V, TJ = 125°C, RG = 2.7 Clamped inductive load, VCC= 0.8 VCES |
ICM =20 @ 0.8 VCES |
A |
tSC (SCSOA) |
VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 ?, non repetitive |
10 | s |
PC | TC = 25°C | 100 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body t = 10s |
300 250 |
°C °C | |
Md | Mounting torque | 1.13/10 | Nm/lb.in. |
Weight | 6 | g |
Technical/Catalog Information | IXSP10N60B2D1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 20A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
Power - Max | 100W |
Mounting Type | Through Hole |
Package / Case | TO-220AB |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXSP10N60B2D1 IXSP10N60B2D1 |