IXSK80N60B

IGBT Transistors 80 Amps 600V 2.5 Rds

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SeekIC No. : 00143498 Detail

IXSK80N60B: IGBT Transistors 80 Amps 600V 2.5 Rds

floor Price/Ceiling Price

Part Number:
IXSK80N60B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-264-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.5 V
Package / Case : TO-264-3


Features:

· International standard packages
·Very high current, fast switching IGBT
· Low VCE(sat)
- for minimum on-state conduction losses
· MOS Gate turn-on
- drive simplicity



Application

· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninterruptible power supplies (UPS)
·Switch-mode and resonant-modepower supplies



Specifications

Symbol           Test Conditions                                                             Maximum Ratings
VCES        TJ = 25°C to 150°C                                                           600                   V
VCGR        TJ = 25°C to 150°C; RGS = 1 M                                      600                   V
VCES         Continuous                                                                        ±20                   V
VGEM         Transient                                                                           ±30                   V
IC25          TC = 25°C (silicon chip capability)                                     160                   A
IC90          TC = 90°C (silicon chip capability)                                      80                    A
IL(RMS)      TC = 90°C (silicon chip capability)                                      75                   A
ICM            TC = 25°C, 1 ms                                                               300                   A
SSOA          VGE = 15 V, TVJ = 125°C, RG = 5                        ICM = 160                    A
(RBSOA)      Clamped inductive load                                         @ 0.8 VCES
tsc               VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C 10 s
SCSOA         RG = 5 , non-repetitive
P               TC = 25°C                                                                       500                   W
T                                                                                            -55 ... +150                  °C
TJM                                                                                                      150                   °C
Tstg                                                                                        -55 ... +150                   °C
TL                 1.6 mm (0.063 in.) from case for 10 s                             300                   °C
Md                Mounting torque TO-264 0.4/6 Nm/lb.in
Weight          PLUS 247                                                                           6                       g
                     TO-264                                                                              10                      g



Parameters:

Technical/Catalog InformationIXSK80N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)160A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 80A
Power - Max500W
Mounting TypeThrough Hole
Package / CaseTO-264AA
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSK80N60B
IXSK80N60B



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