IGBT Transistors 80 Amps 600V 2.5 Rds
IXSK80N60B: IGBT Transistors 80 Amps 600V 2.5 Rds
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: International standard packagesVery high current, fast switching IGBTLow V CE(sat) - for...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-264-3 |
Packaging : | Tube |
Symbol Test Conditions Maximum Ratings |
VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGS = 1 M 600 V |
VCES Continuous ±20 V VGEM Transient ±30 V |
IC25 TC = 25°C (silicon chip capability) 160 A IC90 TC = 90°C (silicon chip capability) 80 A IL(RMS) TC = 90°C (silicon chip capability) 75 A ICM TC = 25°C, 1 ms 300 A |
SSOA VGE = 15 V, TVJ = 125°C, RG = 5 ICM = 160 A (RBSOA) Clamped inductive load @ 0.8 VCES |
tsc VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C 10 s SCSOA RG = 5 , non-repetitive |
PC TC = 25°C 500 W |
TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C |
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C |
Md Mounting torque TO-264 0.4/6 Nm/lb.in |
Weight PLUS 247 6 g TO-264 10 g |
Technical/Catalog Information | IXSK80N60B |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 160A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 80A |
Power - Max | 500W |
Mounting Type | Through Hole |
Package / Case | TO-264AA |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXSK80N60B IXSK80N60B |