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IXSK35N120AU1

IGBT Transistors 70 Amps 1200V 4 Rds

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SeekIC No. : 00143593 Detail

IXSK35N120AU1: IGBT Transistors 70 Amps 1200V 4 Rds

IXSK35N120AU1 Data Sheet

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Part Number:
IXSK35N120AU1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-264AA-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-264AA-3


Features:

• International standard package JEDEC TO-264 AA
• High frequency IGBT and anti-parallel FRED in one package
• 2nd generation HDMOSTM process
• Low VCE(sat)
   - for minimum on-state conduction losses
• MOS Gate turn-on
   - drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
   - soft recovery with low IRM


Application

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 1200
1200
 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30
 V
IC25
IC90
ICM
 TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
 70
35
140

A
A
A

SSOA
(RBSOA)		 VGE = 15 V, TJ = 125°C, RG = 2.7
Clamped inductive load, VCC= 0.8 VCES		 ICM =70
@ 0.8 VCES		 A
tSC
(SCSOA)		 VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 ?, non repetitive		 10 s
PC TC = 25°C IGBT
Diode		 300
190		 W
W
TJ
TJM
Tstg
TL		 1.6 mm (0.063 in) from case for 10 s -55 ... +150
150
-55 ... +150
300		 °C
°C
°C
°C
Md Mounting torque 1.15/13 Nm/lb.in.
Weight   10 g



Parameters:

Technical/Catalog InformationIXSK35N120AU1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 35A
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-264AA
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSK35N120AU1
IXSK35N120AU1



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