IXSA10N60B2D1

IGBT Transistors 10 Amps 600V 2.5 Rds

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SeekIC No. : 00143949 Detail

IXSA10N60B2D1: IGBT Transistors 10 Amps 600V 2.5 Rds

floor Price/Ceiling Price

Part Number:
IXSA10N60B2D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/11

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : 20 V
Gate-Emitter Leakage Current : +/- 100 nA Power Dissipation : 100 W
Maximum Operating Temperature : + 150 C Package / Case : TO-263-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.5 V
Power Dissipation : 100 W
Package / Case : TO-263-3


Features:

• International standard packages
• Guaranteed Short Circuit SOA capability
• Low VCE(sat)
   - for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
   - drive simplicity
• Fast fall time for switching speeds up to 20 kHz



Application

• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding



Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
IC25
IC110
IF(110)
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
20
10
11
30

A
A
A
A

SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 2.7
Clamped inductive load, VCC= 0.8 VCES
ICM =20
@ 0.8 VCES
A
tSC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 ?, non repetitive
10 s
PC TC = 25°C 100 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic Body t = 10s
300
250
°C
°C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight   6 g



Parameters:

Technical/Catalog InformationIXSA10N60B2D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)20A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 10A
Power - Max100W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXSA10N60B2D1
IXSA10N60B2D1



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