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IXLF19N250A

IGBT Transistors High Voltage IGBT 2500V; 19A

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SeekIC No. : 00143494 Detail

IXLF19N250A: IGBT Transistors High Voltage IGBT 2500V; 19A

IXLF19N250A Data Sheet

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Part Number:
IXLF19N250A
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 2500 V
Collector-Emitter Saturation Voltage : 3.9 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : 500 nA Power Dissipation : 250 W
Maximum Operating Temperature : + 150 C Package / Case : ISOPLUS i4-PAC-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 250 W
Gate-Emitter Leakage Current : 500 nA
Collector-Emitter Saturation Voltage : 3.9 V
Package / Case : ISOPLUS i4-PAC-3
Collector- Emitter Voltage VCEO Max : 2500 V


Parameters:

Technical/Catalog InformationIXLF19N250A
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)2500V
Current - Collector (Ic) (Max)32A
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 19A
Power - Max250W
Mounting TypeThrough Hole
Package / CaseISOPLUS i4-PAC?
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXLF19N250A
IXLF19N250A



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