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IXGY2N120

IGBT Transistors 2 Amps 1200V 3 Rds

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SeekIC No. : 00143539 Detail

IXGY2N120: IGBT Transistors 2 Amps 1200V 3 Rds

IXGY2N120 Data Sheet

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Part Number:
IXGY2N120
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 3 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-252AA-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 3 V
Package / Case : TO-252AA-3


Parameters:

Technical/Catalog InformationIXGY2N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)5A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 2A
Power - Max25W
Mounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads + tab)
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGY2N120
IXGY2N120



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