IGBT Transistors 50 Amps 600V 2.5 V Rds
IXGX50N60C2D1: IGBT Transistors 50 Amps 600V 2.5 V Rds
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Features: • Square RBSOA• High current handling capability• MOS Gate turn-on for...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | PLUS 247-3 |
Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25 to 150 TJ = 25 to 150; RGE = 1 M |
600 600 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
IC25 IC110 IF110 ICM |
TC = 25 (limited by leads) TC = 110 TC = 110 TC = 25, 1 ms |
75 50 48 300 |
A A A A |
SSOA (RBSOA) |
VGE = 15 V, TVJ = 125, RG = 10 Clamped inductive load @ VCE 600 V |
ICM = 100 | A |
PC | TC = 25 | 480 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
||
Md | Mounting torque, TO-264 | 1.13/10 Nm/lb.in. | |
Weight | TO-264 PLUS247 |
6 | g g |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 |
Technical/Catalog Information | IXGX50N60C2D1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 75A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
Power - Max | 480W |
Mounting Type | Through Hole |
Package / Case | PLUS 247 |
Packaging | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGX50N60C2D1 IXGX50N60C2D1 |