IGBT Transistors 76 Amps 600V 2.1 Rds
IXGX120N60B: IGBT Transistors 76 Amps 600V 2.1 Rds
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Features: • Square RBSOA• High current handling capability• MOS Gate turn-on for...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | +/- 400 nA | Power Dissipation : | 660 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | PLUS 247-3 |
Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
600 600 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
Ic25 Ic90 ICM |
TC = 25°C TC = 90°C External lead limit TC = 25°C 1 ms |
200 120 76 300 |
A |
SSOA (RBSOA) |
VGE= 15 V, TVJ = 125°C, RG = 2.4 Clamped inductive load |
ICM = 200 @ 0.8 VCES |
V/ns |
Pc | TC = 25°C | 560 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 |
°C | |
Md | Mounting torque (M3) TO-247 | ABSOLUTE MAXIMUM RATINGS | Nm/lb.in. |
Weight | TO-247 AD TO-268 |
6 10 |
g g |
Technical/Catalog Information | IXGX120N60B |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 200A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 120A |
Power - Max | 660W |
Mounting Type | Through Hole |
Package / Case | PLUS 247 |
Packaging | * |
Other Names | IXGX120N60B IXGX120N60B |