IGBT Transistors 50 Amps 600V 2.0 V Rds
IXGT50N60B2: IGBT Transistors 50 Amps 600V 2.0 V Rds
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Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Specifications VCES TJ = 25 to 150 1200 V VCGR TJ = 25 to 150; RGE = 1 M 1200 V V...
Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-268-3 |
Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
600 600 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
Ic25 Ic90 ICM |
TC = 25°C TC = 90°C TC = 25°C 1 ms |
75 50 200 |
A |
SSOA (RBSOA) |
VGE= 15 V, TVJ = 125°C, RG = 10 Clamped inductive load @ 600V |
ICM = 100 |
V/ns |
Pc | TC = 25°C | 400 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
Md | Mounting torque Terminal connection torque (M4) |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C | |
Weight | TO-247 AD TO-268 |
6 4 |
g g |
Technical/Catalog Information | IXGT50N60B2 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 75A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
Power - Max | 400W |
Mounting Type | Surface Mount |
Package / Case | TO-268 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGT50N60B2 IXGT50N60B2 |