IXGT50N60B

IGBT Transistors 75 Amps 600V 2.5 Rds

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SeekIC No. : 00143014 Detail

IXGT50N60B: IGBT Transistors 75 Amps 600V 2.5 Rds

floor Price/Ceiling Price

Part Number:
IXGT50N60B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-268-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-268-3


Parameters:

Technical/Catalog InformationIXGT50N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 50A
Power - Max300W
Mounting TypeSurface Mount
Package / CaseTO-268
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGT50N60B
IXGT50N60B



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