IGBT Transistors 60 Amps 600V 2.5 Rds
IXGT32N60C: IGBT Transistors 60 Amps 600V 2.5 Rds
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Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Specifications VCES TJ = 25 to 150 1200 V VCGR TJ = 25 to 150; RGE = 1 M 1200 V V...
Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-268-3 | Packaging : | Tube |
Symbol |
Test Conditions |
Maximum |
Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
600 600 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
IC25 IC90 ICM |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
60 32 120 |
A A A |
SSOA (RBSOA) |
VGE= 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 100 H |
ICM = 64 @ 0.8 VCES |
A |
PC |
TC = 25°C |
200 |
W |
TJ TJM Tstg |
-55 ... +150 150 Tstg -55 ... +150 |
°C °C °C | |
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 |
°C | |
Md |
Mounting torque |
1.13/10 |
Nm/lb.in. |
Weight |
TO-247 SMD TO-268 |
6 4 |
g g |
Technical/Catalog Information | IXGT32N60C |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGT32N60C IXGT32N60C |