IXGT31N60D1

IGBT Transistors 60 Amps 600V 1.7 Rds

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SeekIC No. : 00143634 Detail

IXGT31N60D1: IGBT Transistors 60 Amps 600V 1.7 Rds

floor Price/Ceiling Price

Part Number:
IXGT31N60D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/29

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-268AA-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-268AA-3


Parameters:

Technical/Catalog InformationIXGT31N60D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 31A
Power - Max150W
Mounting TypeSurface Mount
Package / CaseTO-268
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGT31N60D1
IXGT31N60D1



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