IGBT Transistors 50 Amps 1200V 3.5 V Rds
IXGT30N120BD1: IGBT Transistors 50 Amps 1200V 3.5 V Rds
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Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Specifications VCES TJ = 25 to 150 1200 V VCGR TJ = 25 to 150; RGE = 1 M 1200 V V...
Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Packaging : | Tube |
Technical/Catalog Information | IXGT30N120BD1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | - |
Vce(on) (Max) @ Vge, Ic | - |
Power - Max | - |
Mounting Type | Surface Mount |
Package / Case | TO-268 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGT30N120BD1 IXGT30N120BD1 |