IGBT Transistors 75 Amps 1600V 2.5 Rds
IXGT25N160: IGBT Transistors 75 Amps 1600V 2.5 Rds
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Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Specifications VCES TJ = 25 to 150 1200 V VCGR TJ = 25 to 150; RGE = 1 M 1200 V V...
Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1600 V |
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-268-3 |
Packaging : | Tube |
Technical/Catalog Information | IXGT25N160 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1600V |
Current - Collector (Ic) (Max) | 75A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 25A |
Power - Max | 300W |
Mounting Type | Surface Mount |
Package / Case | TO-268 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGT25N160 IXGT25N160 |