IGBT Transistors 24 Amps 1200 V 3.3 V Rds
IXGT24N170: IGBT Transistors 24 Amps 1200 V 3.3 V Rds
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Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Specifications VCES TJ = 25 to 150 1200 V VCGR TJ = 25 to 150; RGE = 1 M 1200 V V...
Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1700 V |
Collector-Emitter Saturation Voltage : | 3.3 V | Maximum Gate Emitter Voltage : | 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-268-3 |
Packaging : | Tube |
Symbol | Test Conditions |
Maximum Ratings | |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ |
1700 1700 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
IC25 IC90 ICM |
TC = 25°C TC = 90°C TC = 25°C, 1 ms |
50 24 150 |
A A A |
SSOA (RBSOA) |
VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load |
ICM = 50 @ 0.8 VCES |
A |
PC | TC = 25°C |
250 |
W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s |
300 260 |
°C °C | |
Md | Mounting torque (M3) |
1.13/10Nm/lb.in. | |
Weight |
TO-247 AD |
6 4 |
g g |
Technical/Catalog Information | IXGT24N170 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 50A |
Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 24A |
Power - Max | 250W |
Mounting Type | Surface Mount |
Package / Case | TO-268 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGT24N170 IXGT24N170 |