IGBT Transistors 11 Amps 1700V 5 Rds
IXGT16N170AH1: IGBT Transistors 11 Amps 1700V 5 Rds
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Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Specifications VCES TJ = 25 to 150 1200 V VCGR TJ = 25 to 150; RGE = 1 M 1200 V V...
Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Collector-Emitter Saturation Voltage : | 5 V | Package / Case : | TO-268-3 |
Packaging : | Box |
Technical/Catalog Information | IXGT16N170AH1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 16A |
Vce(on) (Max) @ Vge, Ic | 5V @ 15V, 11A |
Power - Max | 190W |
Mounting Type | Surface Mount |
Package / Case | TO-268 |
Packaging | Box |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGT16N170AH1 IXGT16N170AH1 |