IGBT Transistors 30 Amps 1200V 3.8 Rds
IXGT15N120CD1: IGBT Transistors 30 Amps 1200V 3.8 Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-268AA-3 | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
1200 1200 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
Ic25 Ic90 ICM |
TC = 25°C TC = 90 °C TC = 25°C 1 ms |
30 15 60 |
A |
SSOA (RBSOA) |
VGE= 15 V, TVJ = 125°C, RG = 10 Clamped inductive load, L = 100 H |
ICM = 40 @ 0.8 VCES |
V/ns |
Pc | TC = 25°C | 150 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
Md | Mounting torque (M3) | 1.13/10 | Nm/lb.in. |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C | |
Maximum tab temperature soldering SMD devices for 10s |
260 |
°C | |
Weight |
TO-247AD/TO-268 |
6/4 |
g |
Technical/Catalog Information | IXGT15N120CD1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGT15N120CD1 IXGT15N120CD1 |