IGBT Transistors 30 Amps 1200V 3.2 Rds
IXGT15N120B: IGBT Transistors 30 Amps 1200V 3.2 Rds
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Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Specifications VCES TJ = 25 to 150 1200 V VCGR TJ = 25 to 150; RGE = 1 M 1200 V V...
Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 3.2 V | Maximum Gate Emitter Voltage : | 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-268-3 |
Packaging : | Tube |
Technical/Catalog Information | IXGT15N120B |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGT15N120B IXGT15N120B |