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IXGT15N120B

IGBT Transistors 30 Amps 1200V 3.2 Rds

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SeekIC No. : 00143601 Detail

IXGT15N120B: IGBT Transistors 30 Amps 1200V 3.2 Rds

IXGT15N120B Data Sheet

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Part Number:
IXGT15N120B
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 3.2 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-268-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-268-3
Collector-Emitter Saturation Voltage : 3.2 V


Parameters:

Technical/Catalog InformationIXGT15N120B
VendorIXYS
CategoryDiscrete Semiconductor Products
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGT15N120B
IXGT15N120B



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