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IXGR50N60B

IGBT Transistors 75 Amps 600V 2.3 Rds

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SeekIC No. : 00143566 Detail

IXGR50N60B: IGBT Transistors 75 Amps 600V 2.3 Rds

IXGR50N60B Data Sheet

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Part Number:
IXGR50N60B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : ISOPLUS 247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : ISOPLUS 247-3


Features:

·DCB Isolated mounting tab
·Meets TO-247AD package Outline
·High current handling capability
·Latest generation HDMOSTM process
·MOS Gate turn-on
- drive simplicity






Application

·Uninterruptible power supplies (UPS)
·Switched-mode and resonant-mode power supplies
·AC motor speed control
·DC servo and robot drives
·DC choppers






Specifications

Symbol Test Conditions

Maximum

Ratings

VCES
VCGR		 TJ = 25 to 150
TJ = 25 to 150; RGE = 1 MΩ

600
600

V
V

VGES
VGEM		 Continuous
Transient		 ±20
±30

V
V

IC25
IC110
ICM		 TC = 25
TC = 110
TC = 25, 1 ms

75
45
200

A
A
A

SSOA
(RBSOA)		 VGE = 15 V, TVJ = 125, RG = 10 Ω
Clamped inductive load, L = 100 µH

ICM = 100
@ 0.8 VCES

A

PC TC = 25

250

W

TJ
TJM
Tstg

-55 to +150
150
-55 to +150



Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s

300

VISOL 50/60 Hz, RMS, t = 1minute leads-to-tab

2500

V

Weight

5

g







Parameters:

Technical/Catalog InformationIXGR50N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGR50N60B
IXGR50N60B



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