IGBT Transistors 17 Amps 1700V 5.2 Rds
IXGR32N170AH1: IGBT Transistors 17 Amps 1700V 5.2 Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1700 V |
Collector-Emitter Saturation Voltage : | 5.2 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | ISOPLUS247-3 |
Packaging : | Box |
Technical/Catalog Information | IXGR32N170AH1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 26A |
Vce(on) (Max) @ Vge, Ic | 5.2V @ 15V, 17A |
Power - Max | 200W |
Mounting Type | Through Hole |
Package / Case | ISOPLUS247? |
Packaging | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGR32N170AH1 IXGR32N170AH1 |