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IXGQ35N120BD1

IGBT Transistors 35 Amps 1200 V 3.3 Rds

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SeekIC No. : 00142977 Detail

IXGQ35N120BD1: IGBT Transistors 35 Amps 1200 V 3.3 Rds

IXGQ35N120BD1 Data Sheet

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Part Number:
IXGQ35N120BD1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-3P-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-3P-3


Parameters:

Technical/Catalog InformationIXGQ35N120BD1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic3.3V @ 15V, 35A
Power - Max400W
Mounting TypeThrough Hole
Package / CaseTO-3P
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGQ35N120BD1
IXGQ35N120BD1



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