Position: Home  > All Categories> Integrated Circuits (ICs) > IXGQ20N120BD1

IXGQ20N120BD1

IGBT Transistors 20 Amps 1200 V 3.4 Rds

product image

IXGQ20N120BD1 Picture
See larger image
SeekIC No. : 00143088 Detail

IXGQ20N120BD1: IGBT Transistors 20 Amps 1200 V 3.4 Rds

IXGQ20N120BD1 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXGQ20N120BD1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/20

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-3P-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-3P-3


Features:

International standard package
 IGBT and anti-parallel FRED for resonant power supplies
   - Induction heating
   - Rice cookers
 MOS Gate turn-on
   - drive simplicity
 Fast Recovery Expitaxial Diode (FRED)
   - soft recovery with low IRM


Specifications

Symbol Test Conditions
Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
1200
V
V
VGES
VGEM		 Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM		 TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
40
20
100
A
A
A
SSOA
(RBSOA)		 VGE = 15 V, TJ = 125°C, RG = 10 Ω
Clamped inductive load
ICM = 40
@ 0.8 VCES
A
PC TC = 25°C
190
W
TJ
TJM
Tstg		  
-55 ... +150
             150
-55 ... +150
°C
°C
°C
Md Mounting torque (M3)
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Weight

 
6
g



Parameters:

Technical/Catalog InformationIXGQ20N120BD1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)40A
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 20A
Power - Max190W
Mounting TypeThrough Hole
Package / CaseTO-3P
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGQ20N120BD1
IXGQ20N120BD1



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
RF and RFID
X3C26P1-30S
1P620S
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Line Protection, Backups
BX0023
A20B-1008-0550
Optical Inspection Equipment
AA924
A21K4B
Optoelectronics
SFH7770
TLP423J
View more