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IXGP4N100

IGBT Transistors 8 Amps 1000V 2.70 Rds

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SeekIC No. : 00143951 Detail

IXGP4N100: IGBT Transistors 8 Amps 1000V 2.70 Rds

IXGP4N100 Data Sheet

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Part Number:
IXGP4N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1000 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3
Collector- Emitter Voltage VCEO Max : 1000 V


Parameters:

Technical/Catalog InformationIXGP4N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)8A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 4A
Power - Max40W
Mounting TypeThrough Hole
Package / CaseTO-220AB
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGP4N100
IXGP4N100



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