IGBT Transistors 20 Amps 600V 2 Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220AB-3 | Packaging : | Tube |
Symbol |
Test Conditions |
Max. Ratings |
VCES VCGR |
TJ = 25 to 150 TJ = 25 to 150; RGE = 1 M |
600 V 600 V |
VGES VGEM |
Continuous Transient |
±20 V ±30 V |
IC25 IC90 ICM |
TC = 25 TC = 90 T = 25, 1 ms |
40 A 20 A 80 A |
SSOA (RBSOA) |
VGE = 15 V, TVJ = 125, RG = 22 Clamped inductive load, L = 100H |
ICM = 40 A @ 0.8 VCES |
PC | T = 25 |
150 W |
TVJ TVJM Tstg |
-55 ... +150 150 -55 ... +150 | |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 °C | |
Md | Mounting torque (TO-220) |
M3 0.45/4 Nm/lb.in. M3.5 0.55/5 Nm/lb.in. |
Technical/Catalog Information | IXGP20N60B |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 40A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
Power - Max | 150W |
Mounting Type | Through Hole |
Package / Case | TO-220AB |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGP20N60B IXGP20N60B |