IGBT Transistors 40 Amps 1200V 2.5 Rds
IXGP20N120: IGBT Transistors 40 Amps 1200V 2.5 Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 3 V | Maximum Gate Emitter Voltage : | 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220-3 |
Packaging : | Tube |
Technical/Catalog Information | IXGP20N120 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 40A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
Power - Max | 150W |
Mounting Type | Through Hole |
Package / Case | TO-220AB |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGP20N120 IXGP20N120 |