IGBT Transistors 16 Amps 600V 3.0 V Rds
IXGP16N60C2D1: IGBT Transistors 16 Amps 600V 3.0 V Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 3 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220-3 |
Packaging : | Tube |
Technical/Catalog Information | IXGP16N60C2D1 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 40A |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 12A |
Power - Max | 150W |
Mounting Type | Through Hole |
Package / Case | TO-220 |
Packaging | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGP16N60C2D1 IXGP16N60C2D1 |