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IXGN60N60C2D1

IGBT Transistors 60 Amps 600V 1.7 V Rds

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SeekIC No. : 00142657 Detail

IXGN60N60C2D1: IGBT Transistors 60 Amps 600V 1.7 V Rds

IXGN60N60C2D1 Data Sheet

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Part Number:
IXGN60N60C2D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Configuration : Single Dual Emitter Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-227B-4
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.5 V
Configuration : Single Dual Emitter
Package / Case : SOT-227B-4


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