IGBT Transistors 60 Amps 600V 1.7 V Rds
IXGN60N60C2: IGBT Transistors 60 Amps 600V 1.7 V Rds
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Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-227B-4 |
Packaging : | Tube |