IGBT Transistors 75 Amps 600V 2.5 V Rds
IXGN50N60BD3: IGBT Transistors 75 Amps 600V 2.5 V Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT-227B-4 | Packaging : | Tube |
Symbol | Test Conditions |
Maximum Ratings | |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE= 1 M |
600 600 |
V V |
VGS VGEM |
Continuous Transient |
±20 ±30 |
V V |
IC25 IC90 ICM |
TC = 25°C TC = 25°C TC = 25°C,1 ms |
75 50 200 |
A A A |
SSOA (RBSOA) |
VGE= 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH |
ICM = 100 @ 0.8 VCES |
A |
PC | TC = 25°C |
520 |
W |
VRRM IFAVM IFRM |
TC = 70°C; rectangular, d = 50% tP z<10 ms; pulse width limited by TJ |
600 60 600 |
V A A |
PD | TC = 25°C |
150 |
W |
TJ |
-40 ... +150 150 -40 ... +150 |
°C °C °C | |
Md |
Mounting torque Terminal connection torque (M4) |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
Weight |
30 |
g | |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 |
°C |