IXGN50N60B

IGBT Transistors 75 Amps 600V 2.3 V Rds

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IXGN50N60B Picture
SeekIC No. : 00143584 Detail

IXGN50N60B: IGBT Transistors 75 Amps 600V 2.3 V Rds

floor Price/Ceiling Price

Part Number:
IXGN50N60B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Configuration : Single Dual Emitter Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : SOT-227B-4 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Configuration : Single Dual Emitter
Package / Case : SOT-227B-4


Features:

• International standard package SOT-227B
• Aluminium nitride isolation
   - high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching IGBT
• Low VCE(sat) for minimum on-state conduction losses
• MOS Gate turn-on drive simplicity
• Low collector-to-case capacitance (< 50 pF)
• Low package inductance (< 5 nH)
   - easy to drive and to protect



Application

• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies



Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
600
600
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
Ic25
Ic90
ICM
TC = 25°C
TC = 90°C
TC = 25°C 1 ms
75
50
200

A
A
A


SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10
Clamped inductive load, L = 100 H
ICM = 100
@ 0.8 VCES
V/ns
Pc TC = 25°C 250 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
Md Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight   30 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C



Parameters:

Technical/Catalog InformationIXGN50N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 50A
Power - Max300W
Mounting TypeChassis Mount
Package / CaseSOT-227B miniBLOC
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGN50N60B
IXGN50N60B



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