IGBT Transistors 200 Amps 600V 2.1 V Rds
IXGN200N60B: IGBT Transistors 200 Amps 600V 2.1 V Rds
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Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-227B-4 |
Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
300 300 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
Ic25 Ic90 ICM |
TC = 25°C TC = 90°C TC = 25°C 1 ms |
200 120 400 |
A |
SSOA (RBSOA) |
VGE= 15 V, TVJ = 125°C, RG = 10 Clamped inductive load, L = 100 H |
ICM = 200 @ 0.8 VCES |
V/ns |
Pc | TC = 25°C | 600 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
VISOL | 50/60 Hz t = 1 min IISOL 1 mA t = 1 s |
2500 3000 |
V~ V~ |
Md | Mounting torque Terminal connection torque (M4) |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
Weight | 30 | g |
Technical/Catalog Information | IXGN200N60B |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 200A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 120A |
Power - Max | 600W |
Mounting Type | Chassis Mount |
Package / Case | SOT-227B miniBLOC |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGN200N60B IXGN200N60B |