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IXGN200N60A2

IGBT Transistors 100 Amps 600V 1.35 V Rds

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SeekIC No. : 00142623 Detail

IXGN200N60A2: IGBT Transistors 100 Amps 600V 1.35 V Rds

IXGN200N60A2 Data Sheet

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Part Number:
IXGN200N60A2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Dual Emitter Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.35 V Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-227B-4
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Dual Emitter
Package / Case : SOT-227B-4
Collector-Emitter Saturation Voltage : 1.35 V


Parameters:

Technical/Catalog InformationIXGN200N60A2
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)200A
Vce(on) (Max) @ Vge, Ic1.35V @ 15V, 100A
Power - Max700W
Mounting TypeChassis Mount
Package / CaseSOT-227B miniBLOC
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGN200N60A2
IXGN200N60A2



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