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IXGN200N60A

IGBT Transistors 200Amps 600V

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IXGN200N60A: IGBT Transistors 200Amps 600V

IXGN200N60A Data Sheet

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Part Number:
IXGN200N60A
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description

Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :


Features:

· International standard package miniBLOC (ISOTOP compatible)
· Aluminium nitride isolation
    - high power dissipation
· Isolation voltage 3000 V~
· Very high current, fast switching IGBT
· Low VCE(sat)
    - for minimum on-state conduction losses
· MOS Gate turn-on
    - drive simplicity
· Low collector-to-case capacitance (< 50 pF)
· Low package inductance (< 5 nH)
    - easy to drive and to protect


Application

· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninterruptible power supplies (UPS)
· Switch-mode and resonant-mode power supplies


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 600
600		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
Ic25
Ic90
ICM
 TC = 25°C
TC = 90°C
TC = 25°C 1 ms
 200
100
300

A
A
A


SSOA
(RBSOA)		 VGE= 15 V, TVJ = 125°C, RG = 2.4
Clamped inductive load		 ICM = 100
@ 0.8 VCES		 V/ns
Pc TC = 25°C 600 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
VISOL 50/60 Hz t = 1 min
IISOL 1 mA t = 1 s		 2500
3000
 V~
V~
Md Mounting torque
Terminal connection torque (M4)		 1.5/13
1.5/13		 Nm/lb.in.
Nm/lb.in.
Weight   30 g



Parameters:

Technical/Catalog InformationIXGN200N60A
VendorIXYS
CategoryDiscrete Semiconductor Products
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGN200N60A
IXGN200N60A



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