IGBT Transistors 70 Amps 1200V 3.3 V Rds
IXGK35N120B: IGBT Transistors 70 Amps 1200V 3.3 V Rds
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 3.3 V | Maximum Gate Emitter Voltage : | 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-264-3 |
Packaging : | Tube |
Technical/Catalog Information | IXGK35N120B |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 70A |
Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 35A |
Power - Max | 350W |
Mounting Type | Through Hole |
Package / Case | TO-264AA |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGK35N120B IXGK35N120B |