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IXGH6N170

IGBT Transistors 12 Amps 1700 V 4 V Rds

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SeekIC No. : 00142984 Detail

IXGH6N170: IGBT Transistors 12 Amps 1700 V 4 V Rds

IXGH6N170 Data Sheet

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Part Number:
IXGH6N170
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Maximum Gate Emitter Voltage : 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 1700 V


Parameters:

Technical/Catalog InformationIXGH6N170
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)12A
Vce(on) (Max) @ Vge, Ic*
Power - Max75W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGH6N170
IXGH6N170



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