IGBT Transistors HIGH SPEED IGBT N-CHAN 600V 75A
IXGH60N60: IGBT Transistors HIGH SPEED IGBT N-CHAN 600V 75A
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Features: l International standard packageJEDEC TO-247 AD2 IGBT and anti-parallel FRED in onepacka...
Features: l International standard packageJEDEC TO-247 AD2 IGBT and anti-parallel FRED in onepacka...
Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Maximum Gate Emitter Voltage : | 20 V | Power Dissipation : | 300 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247-3 |
Packaging : | Tube |
Symbol | Test Conditions |
Maximum |
Ratings |
VCES VCGR |
TJ= 25to 150 TJ= 25 to 150; RGE = 1 MΩ |
600 600 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
IC25 IC90 ICM |
|
75 60 200 |
A A A |
SSOA (RBSOA) |
VGE= 15 V, TVJ= 125, RG = 150 Ω Clamped inductive load, L = 30 µH |
ICM = 100 @ 0.8 VCES |
A |
PC | TC = 25 |
300 |
W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
| |
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 |
| |
Md |
Mounting torque, TO-247 AD |
1.13/10 |
Nm/lb.in. |
Weight |
TO-247 TO-264 TO-268 |
6 10 4 |
g g g |
Technical/Catalog Information | IXGH60N60 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 75A |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 60A |
Power - Max | 300W |
Mounting Type | Through Hole |
Package / Case | TO-247AD |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGH60N60 IXGH60N60 |