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IXGH40N120B2D1

IGBT Transistors IGBT, Diode 1200V, 75A

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SeekIC No. : 00143483 Detail

IXGH40N120B2D1: IGBT Transistors IGBT, Diode 1200V, 75A

IXGH40N120B2D1 Data Sheet

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Part Number:
IXGH40N120B2D1
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3


Parameters:

Technical/Catalog InformationIXGH40N120B2D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Other Names IXGH40N120B2D1
IXGH40N120B2D1



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