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IXGH32N90B2D1

IGBT Transistors 32 Amps 900V 2.7 Rds

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SeekIC No. : 00142944 Detail

IXGH32N90B2D1: IGBT Transistors 32 Amps 900V 2.7 Rds

IXGH32N90B2D1 Data Sheet

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Part Number:
IXGH32N90B2D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 900 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 900 V


Parameters:

Technical/Catalog InformationIXGH32N90B2D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)900V
Current - Collector (Ic) (Max)64A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 32A
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-247
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGH32N90B2D1
IXGH32N90B2D1



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