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IXGH30N60B2

IGBT Transistors 30 Amps 600V 1.8 V Rds

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SeekIC No. : 00143065 Detail

IXGH30N60B2: IGBT Transistors 30 Amps 600V 1.8 V Rds

IXGH30N60B2 Data Sheet

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Part Number:
IXGH30N60B2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : TO-247-3


Features:

·Medium frequency IGBT
·Square RBSOA
·High current handling capability
·MOS Gate turn-on
   - drive simplicity


Application

·PFC circuits
·Uninterruptible power supplies (UPS)
·Switched-mode and resonant-mode power supplies
·AC motor speed control
·DC servo and robot drives
·DC choppers


Parameters:

Technical/Catalog InformationIXGH30N60B2
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 24A
Power - Max190W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGH30N60B2
IXGH30N60B2



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