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IXGH28N120B

IGBT Transistors 28 Amps 1200V 3.50 Rds

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SeekIC No. : 00143024 Detail

IXGH28N120B: IGBT Transistors 28 Amps 1200V 3.50 Rds

IXGH28N120B Data Sheet

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Part Number:
IXGH28N120B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : 20 V Power Dissipation : 250 W
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Power Dissipation : 250 W
Package / Case : TO-247-3


Features:

· High Voltage IGBT for resonant power supplies
  - Induction heating
  - Rice cookers
· International standard packages JEDEC TO-268 and JEDEC TO-247 AD
·Low switching losses, low V(sat)
· MOS Gate turn-on
   - drive simplicity


Application

·High power density
·Suitable for surface mounting
·Easy to mount with 1 screw, (isolated mounting screw hole)


Parameters:

Technical/Catalog InformationIXGH28N120B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 28A
Power - Max250W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingBulk
Other Names IXGH28N120B
IXGH28N120B



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