IXGH24N60AU1

Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : 30 V
Power Dissipation : 150 W
Continuous Collector Current at 25 C : 48 A
Collector-Emitter Saturation Voltage : 2.7 V
Package / Case : TO-247 AD


Features:

 International standard packages
   JEDEC TO-247 SMD surface
   mountable and JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
   package
2nd generation HDMOSTM process
Low VCE(sat)
   - for minimum on-state conduction losses
MOS Gate turn-on
   - drive simplicity
Fast Recovery Epitaxial Diode (FRED)
   - soft recovery with low IRM


Application

 AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode power supplies


Parameters:

Technical/Catalog Information	IXGH24N60AU1
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	-
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	48A
Vce(on) (Max) @ Vge, Ic	-
Power - Max	-
Mounting Type	Through Hole
Package / Case	TO-247AD
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXGH24N60AU1 IXGH24N60AU1