IXGH20N60BU1

IGBT Transistors G-series A,B,C

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SeekIC No. : 00142253 Detail

IXGH20N60BU1: IGBT Transistors G-series A,B,C

floor Price/Ceiling Price

Part Number:
IXGH20N60BU1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Packaging : Tube    

Description

Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging : Tube


Description

The IXGH20N60BU1 is a kind of HiPerFAST IGBT with diode. There are some features of IXGH20N60BU1 as follows: (1)international standard packages: JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD; (2)high frequency IGBT and antiparallel FRED in one package; (3)high current handling capability; (4)HiPerFAST HDMOS process; (5)MOS gate turn-on drive simplicity. The typical applications include: uninterruptible power supplies (UPS), switched-mode and resonant-mode power supplies, AC motor speed control, DC servo and robot drivers and DC choppers.

What comes next is about the maximum ratings of IXGH20N60BU1: (1)VCES: 600 V at TJ=25 to 150; (2)VCGR: 600 V at TJ=25 to 150, RGE=1 M; (3)VGES: ±20 V when continuous ; (4)VGEM: ±30 V when transient; (5)IC: 40 A when TC=25, 20 A at TC=90 and 80 A at TC=25, 1ms; (6)PC: 150 W at TC=25; (7)TJ: -55 to +150; (8)TJM: 150; (9)Tstg: -55 to +150; (10)maximum lead and tab temperature for soldering 1.6 mm (0.062 in.) for 10s: 300.

The following is about the characteristic values of IXGH20N60BU1 (TJ=25, unless otherwise specified): (1)BVCES: 600 V min at IC=250A, VCE=0 V; (2)VCE(th): 2.5 V min and 5.5 V max at IC=250A, VCE=VGE ; (3)ICES: 200A max at VCE=0.8*VCES, TJ=25 and 8 mA max at VGE=0 V, TJ=125; (4)IGES: ±100 nA max at VCE=0 V, VGE=±20 V; (5)VCE(sat): 1.7 V typ and 2.0 V max at IC=IC90, VGE=15 V; (6)Cies: 1500 pF typ at VCE=25 V, VGE=0 V, f=1 MHz; (7)Coes: 175 pF typ at VCE=25 V, VGE=0 V, f=1 MHz; (8)Cres: 40 pF typ at VCE=25 V, VGE=0 V, f=1 MHz.




Parameters:

Technical/Catalog InformationIXGH20N60BU1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Power - Max150W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGH20N60BU1
IXGH20N60BU1



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