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IXGH12N60B: IGBT Transistors 24 Amps 600V 2.1 Rds

IXGH12N60B Data Sheet

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Part Number:: IXGH12N60B
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/24

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-247AD-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247AD-3

Features:

• Moderate frequency IGBT
• New generation HDMOSTM process
• International standard package JEDEC TO-247
• High peak current handling capability

Application

• PFC circuit
• AC motor speed control
• DC servo and robot drives
• Switch-mode and resonant-mode power supplies

Specifications

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 M	600 600	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_c25 I_c90I_CM	T_C= 25°C T_C= 90°C T_C = 25°C 1 ms	24 12 48	A A A
SSOA (RBSOA)	V_GE= 15 V, T_VJ = 125°C, R_G = 10 Clamped inductive load, L = 100 H	I_CM = 24 @ 0.8 V_CES	V/ns
Pc	T_C= 25°C	100	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
M_d	Mounting torque with screw M3 Mounting torque with screw M3.5	0.45/4 0.55/5	Nm/lb.in. Nm/lb.in.
Weight		6	g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300	°C

Parameters:

Technical/Catalog Information	IXGH12N60B
Vendor	IXYS
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXGH12N60B IXGH12N60B

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IXGH12N60B

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