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IXGF32N170

IGBT Transistors 26 Amps 1700V 3.5 V Rds

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SeekIC No. : 00143490 Detail

IXGF32N170: IGBT Transistors 26 Amps 1700V 3.5 V Rds

IXGF32N170 Data Sheet

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Part Number:
IXGF32N170
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 3.5 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : ISOPLUS i4-PAC-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 3.5 V
Collector- Emitter Voltage VCEO Max : 1700 V
Package / Case : ISOPLUS i4-PAC-3


Parameters:

Technical/Catalog InformationIXGF32N170
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)44A
Vce(on) (Max) @ Vge, Ic*
Power - Max200W
Mounting TypeThrough Hole
Package / CaseISOPLUS i4-PAC?
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGF32N170
IXGF32N170



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