IGBT Transistors 24 Amps 600V 2.7 Rds
IXGA12N60C: IGBT Transistors 24 Amps 600V 2.7 Rds
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Features: • International standard packages JEDEC TO-220AB and TO-263AA• Second genera...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-263AA-3 | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
600 600 |
V V |
VGS VGSM |
Continuous Transient |
±20 ±30 |
V V |
Ic25 Ic90 ICM |
TC = 25°C TC = 90°C TC = 25°C 1 ms |
24 12 48 |
A |
SSOA (RBSOA) |
VGE= 15 V, TVJ = 125°C, RG = 10 Clamped inductive load, L = 100 H |
ICM = 24 @ 0.8 VCES |
V/ns |
Pc | TC = 25°C | 100 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
Md | Mounting torque Terminal connection torque (M4) |
0.45/4 0.55/5 |
Nm/lb.in. Nm/lb.in. |
Weight | 4 | g | |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C |
Technical/Catalog Information | IXGA12N60C |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXGA12N60C IXGA12N60C |