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IXFV52N30P

MOSFET 300V 52A

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SeekIC No. : 00154233 Detail

IXFV52N30P: MOSFET 300V 52A

IXFV52N30P Data Sheet

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Part Number:
IXFV52N30P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 52 A
Resistance Drain-Source RDS (on) : 0.066 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 52 A
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.066 Ohms
Package / Case : PLUS 220


Parameters:

Technical/Catalog InformationIXFV52N30P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C52A
Rds On (Max) @ Id, Vgs66 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3490pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CasePLUS-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFV52N30P
IXFV52N30P



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