MOSFET 14 Amps 800V 0.72 Rds
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Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V |
Continuous Drain Current : | 14 A | Resistance Drain-Source RDS (on) : | 0.7 Ohms |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | PLUS220 |
Packaging : | Tube |
Technical/Catalog Information | IXFV14N80P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 14A |
Rds On (Max) @ Id, Vgs | 720 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 3900pF @ 25V |
Power - Max | 400W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 61nC @ 10V |
Package / Case | PLUS-220 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFV14N80P IXFV14N80P |