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IXFV12N120P

MOSFET 12 Amps 1200V 1 Rds

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SeekIC No. : 00158378 Detail

IXFV12N120P: MOSFET 12 Amps 1200V 1 Rds

IXFV12N120P Data Sheet

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Part Number:
IXFV12N120P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 1.35 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 1200 V
Resistance Drain-Source RDS (on) : 1.35 Ohms
Package / Case : PLUS 220


Parameters:

Technical/Catalog InformationIXFV12N120P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs1.35 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5400pF @ 25V
Power - Max543W
PackagingTube
Gate Charge (Qg) @ Vgs103nC @ 10V
Package / CasePLUS-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFV12N120P
IXFV12N120P



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